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TranslationMobile

電子衍射花樣
電子衍射圖象
電子衍射圖樣

"electron" in Chinese : n. 【物理學(xué)】電子。 the electron bea ...
"pattern" in Chinese : n. 1.模范，榜樣；典范。 2.型，模型；模式；雛型； ...
"diffraction of electron" in Chinese : 電子的繞射
"electron diffraction" in Chinese : 電子衍射，電子繞射
"electron-diffraction" in Chinese : 電子衍射
"diffraction pattern" in Chinese : 繞射圖式; 繞射圖像; 繞射型; 衍射圖形；衍射花樣; 衍射圖樣
"camera for electron diffraction" in Chinese : 電子衍射照相機(jī)
"convergent beam electron diffraction" in Chinese : 會聚束電子衍射
"electron diffraction analysis" in Chinese : 電子繞射分析; 電子衍射分析
"electron diffraction apparatus" in Chinese : 電子衍射裝置
"electron diffraction camera" in Chinese : 電子衍射攝象機(jī); 電子衍射攝影機(jī); 電子衍射照相機(jī); 電子衍射照像機(jī); 電子 ...
"electron diffraction contrast effect" in Chinese : 電子衍射襯比效應(yīng)
"electron diffraction crystallography" in Chinese : 電子衍射晶體學(xué)
"electron diffraction diagram" in Chinese : 電子衍射圖
"electron diffraction i trument" in Chinese : 電子衍射儀

Examples

Tem and electron diffraction patterns show that there exist two major forms of nanowires possessing different morphologies and growth directions , which may indicate that different mechanisms predominate in the growth process
產(chǎn)物中主要包括兩種類型的si納米線，二者具有不同的形貌和結(jié)構(gòu)特征，因此它們遵從不同的生長機(jī)制。
The orientation relationships between cu and mgo are determined by means of electron diffraction patterns . the interface structures are analyzed according to high - resolution images of tem , csl and 0 - lattice theories and verified by simulation computation method
通過電子衍射圖確定了cu與mgo之間的各種取向關(guān)系；根據(jù)高分辨像對界面結(jié)構(gòu)進(jìn)行了研究；通過計(jì)算模擬驗(yàn)證了重位點(diǎn)陣和o -點(diǎn)陣?yán)碚摗?
For xrd , ellipsometry examinations , single - side - polished si ( lll ) wafers were used as substrates and for resistance measurement , glass was used and for infrared examination , double - side - polished si ( lll ) wafers were used and for ultraviolet - visible spectrophotometry , double - side - polished quartz wafers were used and for tem micrograph and electron diffraction pattern observation , cu nets deposited by formvar film were used . the cu - mgf2 cermet films were from 50 to 600nm thick
用于xrd分析、橢偏測量的單拋si ( 111 )晶片和電阻測試的載玻片上淀積膜厚約為600nm ；用于ir測試的雙拋si ( 111 )晶片和uv測試的石英玻璃片上淀積膜厚約為250nm ；用于透射電鏡分析的樣品則淀積在400目銅網(wǎng)上的支撐formvar膜上，膜厚約為50 100nm 。